Ex Situ Thermal Cycle Annealing of Molecular Beam Epitaxy Grown HgCdTe/Si Layers
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منابع مشابه
Effects on surface morphology of epitaxial Y2O3 layers on Si (001) after postgrowth annealing
In this paper, we investigate the influence of postgrowth thermal treatment on the structural quality and surface morphology of crystalline Y2O3 films prepared by molecular beam epitaxy (MBE) on (001) Si substrates. As-grown films are characterized by a relatively thick interfacial layer, which develops during growth. In situ annealing under ultrahigh vacuum results in the desorption of this la...
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The annealing and electrical properties of extrinsic in situ doped mercury cadmium telluride (Hg1.CdTe) epilayers grown by molecular beam epitaxy (MBE) on (211)B CdTe/Si and CdZnTe substrates are studied. The doping is performed with an elemental arsenic source. HgCdTe epilayers of CdTe mole fraction in the range of midwavelength infrared (MWIR) are grown at substrate temperatures of 175-185°C....
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